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Diamond chip ampere-level switch verification is imminent!

2025-04-01 09:06:57

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The National Institute of Advanced Industrial Science and Technology (AIST) in Japan, in collaboration with Honda R&D, has fabricated a prototype of a p-type diamond MOSFET and demonstrated ampere-level high-speed switching operation for the first time. In the future, the company plans to incorporate this technology into the next generation of mobile power devices and conduct operational verification in the hope of implementing it in society.


The National Institute of Advanced Industrial Science and Technology (AIST) in Japan, in collaboration with Honda R&D, has fabricated a prototype of a p-type diamond MOSFET and demonstrated ampere-level high-speed switching operation for the first time. In the future, the company plans to incorporate this technology into the next generation of mobile power devices and conduct operational verification in the hope of implementing it in society.


In March 2025, AIST and Honda R&D Institute announced that they had made a prototype of a p-type diamond MOSFET and demonstrated ampere-level high-speed switching operation for the first time. In the future, they plan to apply this technology to the next generation of mobile power devices and conduct verification, looking forward to its implementation in society.


Diamond semiconductors are known as the ultimate semiconductors, with excellent properties, including the ability to achieve high energy efficiency. As a result, they are expected to be used in a variety of fields, such as electric vehicles and renewable energy. However, the use of diamond as a semiconductor material also brings many challenges, such as difficulties in crystal growth and processing. In addition, in order to be put into practical use, it is necessary to be able to handle large currents in the ampere range and perform high-speed switching operations.



The research team increased the size of the substrate and developed parallel wiring technology to increase the current. They made a large number of p-type MOSFETs on a half-inch diamond substrate and evaluated their characteristics after wiring in parallel. They confirmed that the performance of the 1020μm gate width device was excellent and the substrate device manufacturing yield was high.

In addition, the source, gate, and drain electrodes of 314 single elements were connected in parallel. The gate connection method made the total gate width about 32cm, and the switching speed of the element was evaluated using the double pulse method. The results confirmed that when the drive current was 2.5A, the fall time was 19 nanoseconds and the rise time was 32 nanoseconds.




High Light Intelligence Technology, a pioneer in the CVD diamond industry, has advanced MPCVD technology and CVD diamond production workshops. We focus on producing high-purity lab-grown diamonds for the jewelry industry, and at the same time create industrial-grade CVD diamond products, covering single crystalspolycrystallinefilms and diamond surface metallization and so on. We also provide 6kw/10kw/15kw MPCVD equipment to help customers in all aspects, from equipment to products, and then to all-round services, to create brilliance together.

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Diamond chip ampere-level switch verification is imminent!
The National Institute of Advanced Industrial Science and Technology (AIST) in Japan, in collaboration with Honda R&D, has fabricated a prototype of a p-type diamond MOSFET and demonstrated ampere-level high-speed switching operation for the first time. In the future, the company plans to incorporate this technology into the next generation of mobile power devices and conduct operational verification in the hope of implementing it in society.
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