Huawei and Harbin Institute of Technology jointly publish patents for three-dimensional integrated chips based on silicon and diamond

Recently, a patent for "a hybrid bonding method for three-dimensional integrated chips based on silicon and diamond" applied by Huawei Technologies Co., Ltd. and Harbin Institute of Technology was published. The substantive review will take effect on November 14. This invention patent will greatly benefit the development of the diamond industry, provide important basis and reference for the application of diamond chips, and promote major changes in the field of chip manufacturing.

It is understood that the mainstream direction of the development of the semiconductor industry is three-dimensional integration technology. However, as the integration density continues to increase and feature sizes continue to shrink, the thermal management of electronic chips faces great challenges. The heat accumulated inside the chip is difficult to transfer to the heat sink on the package surface, resulting in a sudden increase in internal junction temperature, which seriously threatens chip performance, stability, and service life.

As the material with the highest thermal conductivity among natural substances, diamond also has the advantages of high breakdown field strength, high carrier mobility, and radiation resistance. Silicon-based and diamond-based substrate materials are combined through Cu/SiO₂ hybrid bonding technology. Three-dimensional integration can combine the mature processes and production lines of silicon-based semiconductor devices, the advantages of high production efficiency, low cost, and the extremely high development potential of diamond, and provide heat dissipation channels for three-dimensional integrated silicon-based devices to improve the reliability of the devices.

However, the existing Cu/SiO₂ hybrid bonding technology mostly uses silicon as the substrate for integration, and its integration process is not completely suitable for diamond. In this context, "a three-dimensional integrated hybrid bonding technology based on silicon and diamond" It came into being.

The method includes: preparing a silicon-based Cu/SiO₂ mixed bonded sample and a diamond-based Cu/SiO₂ mixed bonded sample and then performing plasma activation treatment; soaking the Cu/SiO₂ mixed bonded sample after plasma activation treatment in an organic acid solution Medium, rinse and blow dry;

Drop the hydrofluoric acid solution on the surface to be bonded of the dried silicon-based and/or diamond-based Cu/SiO₂ mixed bonded samples, and align the silicon-based and diamond-based Cu/SiO₂ mixed bonded samples. Pre-bonding, a pre-bonded chip is obtained; the pre-bonded chip is subjected to hot pressure bonding and annealing treatment to obtain a mixed bonding sample pair.

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曼尼森吉他定制

Huawei and Harbin Institute of Technology jointly publish patents for three-dimensional integrated chips based on silicon and diamond

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